A Novel Method for the Preparation of Si Nanowires
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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YANG Jung-Yen
National Nano Device Laboratories
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SU Chun-Jung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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LIN Horng-Chih
National Nano Device Labs.
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Su Chun-jung
Department Of Electronics Engineering And Institute Of Electronics Engineering National Chiao Tung U
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Lin Horng-chih
National Nano Device Lab.
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SHEN Shih-Wen
National Nano Device Laboratory
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Shen Shih-wen
National Nano Device Laboratories
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LIN Raymond
National Nano Device Laboratories
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Lin Horng-chih
National Chiao Tung University
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- Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
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- The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
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- A Study on the Radiation Hardness of Flash Cell with Horn-Shaped Floating-Gate
- Effects of Floating-Gate Doping Concentration of Flash Cell Performance
- The Role of a Resist During O_2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
- Characterization of Antenna Effect by Nondestructive Gate Current Measurement
- Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
- Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
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- Devices Characteristics and Aggravated Negative Bias Temperature Instability in PMOSFETs with Uniaxial Compressive Strain
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- Improving Electrical Properties and Thermal Stability of (Ba,Sr)TiO3 Thin Films on Cu(Mg) Bottom Electrodes
- The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
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- Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment
- Fabrication and Characterization of Schottky Barrier Polysilicon Thin-Film Transistors with Excimer-Laser Crystallized Channel
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