Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-11-30
著者
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Huang T‐y
National Chiao Tung Univ. Hsinchu Twn
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HUANG Tiao-Yuan
Institute of Electronics, National Chiao Tung University
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Yang M‐j
Kyushu Univ. Fukuoka Jpn
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CHIEN Chao-Hsin
National Nano Device Laboratories
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Lehnen Peer
Aixtron Ag Kackertstr
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LU Wen-Tai
Institute of Electronics, National Chiao-Tung University
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LAN Wen-Ting
Institute of Electronics, National Chiao-Tung University
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LEE Tsung-Chieh
Institute of Electronics, National Chiao-Tung University
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YANG Ming-Jui
National Nano Device Laboratory
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SHEN Shih-Wen
National Nano Device Laboratory
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Yang Ming-jui
National Nano Device Laboratories
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