Superior SONOS Flash Memory with Tapered-Bandgap Nitride Layer
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
WU Kuo-Hong
Chung-Cheng Institute of Technology, National Defense University
-
CHEN Tung-Sheng
Chung-Cheng Institute of Technology, National Defense University
-
KAO Chin-Hsing
Chung-Cheng Institute of Technology, National Defense University
-
CHIEN Hua-Ching
Chung-Cheng Institute of Technology, National Defense University
-
TSAI Tzung-Kuen
Chung-Cheng Institute of Technology, National Defense University
-
CHANG Jui-Wen
Chung-Cheng Institute of Technology, National Defense University
-
CHAN Chih-Chiang
Chung-Cheng Institute of Technology, National Defense University
-
CHIEN Chao-Hsin
National Nano Device Laboratories
-
LEE Kung-Hong
National Tsing-Hua University
-
KING Ya-Chin
National Tsing-Hua University
-
King Ya-chin
National Tsing Hua University
-
Kao Chin‐hsing
National Defense Univ. Taoyuan Twn
-
Tsai Tzung-kuen
Chung-cheng Institute Of Technology National Defense University
-
Chen Tung‐sheng
National Defense Univ. Taoyuan Twn
-
Kao Chin-hsing
Chung-cheng Institute Of Technology National Defense University
-
Wu Kuo-hong
Chung-cheng Institute Of Technology National Defense University
-
Chien Hua-ching
Chung-cheng Institute Of Technology National Defense University
-
Chen Tung-sheng
Chung-cheng Institute Of Technology National Defense University
-
Chang Jui-wen
Chung-cheng Institute Of Technology National Defense University
-
Chan Chih-chiang
Chung-cheng Institute Of Technology National Defense University
関連論文
- Superior SONOS Flash Memory with Tapered-Bandgap Nitride Layer
- Improvements on Electrical Characteristics of p-Channel Metal-Oxide-Semiconductor Field Effect Transistors with HfO_2 Gate Stacks by Post Deposition N_2O Plasma Treatment
- Electrical Characteristics of Thin HfO_2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- The Effects of Low-Pressure Rapid Thermal Post-Annealing on the Properties of (Ba, Sr)TiO_3 Thin Films Deposited by Liquid Source Misted Chemical Deposition : Instrumentation, Measurement, and Fabrication Technology
- Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
- Reliability of Strained SiGe Channel p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ultra-Thin ($\text{EOT}=3.1$ nm) N2O-Annealed SiN Gate Dielectric
- Deep Sub-Micron Strained Si_Ge_ Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric
- Deep Sub-Micron Strained Si0.85Ge0.15 Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric
- Characteristics of the Inter-Poly Al2O3 Dielectrics on NH3-Nitrided Bottom Poly-Si for Next-Generation Flash Memories
- Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- Improvements on Electrical Characteristics of p-Channel Metal–Oxide–Semiconductor Field Effect Transistors with HfO2 Gate Stacks by Post Deposition N2O Plasma Treatment
- Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3 Thin Films at Low Temperature for Low-Voltage Operation