Deep Sub-Micron Strained Si_<0.85>Ge_<0.15> Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2005-03-10

著者

• CHIEN Chao-Hsin

  National Nano Device Laboratories

• CHEN Ching-Wei

  Institute of Electronics, National Chiao-Tung University

• Hsu Shih-lu

  National Nano Device Laboratory

• Chen Yi-cheng

  Institute Of Electronics National Chiao-tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Chen Ching-wei

  Institute Of Electronics National Chiao-tung University

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