Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
スポンサーリンク
概要
- 論文の詳細を見る
An hydrogenated amorphous silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diode (TFLED), in which a composition-graded n layer and carbon-increasing p layer respectively replace the constant optical-gap p-a-SiC:H layer and n-a-SiC:H layer employed in the previously reported double graded-gap (DG) TFLED and which contains dopant-graded p-i and i-n junctions, was successfully fabricated to improve the electroluminescence (EL) of TFLED. This device had a brightness of 400 cd/m2 at an injection current density of 600 mA/cm2 and its EL threshold voltage (V th) was only 9.9 V. The device EL spectrum showed a peak at 586 nm wavelength and emitted yellowish-orange light. The proposed TFLED had good stability of EL intensity and the EL spectrum during normal operation. The optimum conditions of rapid thermal annealing (RTA), which improved the ohmic contact between the amorphous layer and external electrode of the device, were 5 min at 300°C in a 250 Torr H2 ambient.
- 1996-02-28
著者
-
Hong Jyh-wong
Department Of Electrical Engineering National Central University
-
LAIH Li-Hong
Department of Electrical Engineering, National Central University
-
CHEN Jyh-Kuan
Department of Electrical Engineering, National Central University
-
Tsay Wen-chin
Department Of Electrical Engineering National Central University
-
Chen Yen-ann
Department Of Electrical Engineering National Central University
-
Chang Chun-yen
Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories
-
Laih Li-Hong
Department of Electrical Engineering, National Central University, Chungli, 32054 Taiwan, Republic of China
-
Chang Chun-Yen
Institute of Electronics, National Chiao Tung University, Hsinchu, 30050 Taiwan, Republic of China
-
Tsay Wen-Chin
Department of Electrical Engineering, National Central University, Chungli, 32054 Taiwan, Republic of China
-
Chen Yen-Ann
Department of Electrical Engineering, National Central University, Chungli, 32054 Taiwan, Republic of China
-
Chen Jyh-Kuan
Department of Electrical Engineering, National Central University, Chungli, 32054 Taiwan, Republic of China
関連論文
- TiWN Schottky Contacts to n-Ga_In_P
- Improvement of Current Injection of Porous Silicon
- Improving the Transient Response of a Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe:H Film
- Improving Transient Response of Si Metal-Semiconductor-Metal Photodetector with an Additional i-a-SiGe Film
- Improvement of Current Injection of Porous Silicon
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
- Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
- Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
- Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
- Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
- Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
- Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
- Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
- Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
- Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
- Electrical and Optical Characteristics of an a-Si:H/c-Si Heterojunction Switch
- A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
- Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
- Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
- Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
- Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
- New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
- Leakage Current Reduction of Chemical-Vapor-Deposited Ta_2O_5 Films on Rugged Polycrystalline Silicon Electrode for Dynamic Random Access Memory Application
- Effects of N_2O-Plasma Treatment of a-SiO_xN_y/a-SiN_x Gate Insulators on Electrical Stability of a-Si:H Thin-Film Transistors
- Orientation Dependence of Coherent Hole Oscillations in GaAs/AlGaAs Coupled Quantum Wells
- Molecular Beam Epitaxy Grown GaAs Bipolar-Unipolar Transition Negative Differential Resistance Power Transistor
- A Novel Thin-Film Transistor with Vertical Offset Structure
- Hydrogenated Amorphous Silicon Carbide P-I-N Thin-Film Light-Emitting Diodes with Barrier Layers Inserted at P-I Interface
- Low-Pressure Crystallization of Sol-Gel-Derived PbZr_Ti_O_3 Thin Films at Low Temperature for Low-Voltage Operation
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Double Graded-Gap a-SiC:H P-I-N Thin-Film LED with Composition-Graded N-Layer and Carbon-Increasing P-Layer
- A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
- Charge Loss Due to AC Program Disturbance Stresses in EPROMs
- Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
- A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
- Direct Measurement of Electrical Hysteresis of Micron-Sized Pb(Zr, Ti)O_3 Capacitors using the Constant Current Method
- Improved electrical characteristics of Pt/Gd_2O_3/GaAs MOS capacitors with surface preparation procedures
- Double Graded-Gap Hydrogenated Amorphous Silicon Carbide Thin-Film Light-Emitting Diode with Composition-Graded N Layer and Carbon-Increasing P Layer
- Reliability of Strained SiGe Channel p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Ultra-Thin ($\text{EOT}=3.1$ nm) N2O-Annealed SiN Gate Dielectric
- Deep Sub-Micron Strained Si_Ge_ Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N_2O-Annealed SiN Gate Dielectric
- Effects of Dielectrics on the Characteristics of Large-Area Silicon Microstrip Sensors
- Deep Sub-Micron Strained Si0.85Ge0.15 Channel p-channel Metal-Oxide-Semiconductor Field-Effect Transistors (pMOSFETs) with Ultra-Thin N2O-Annealed SiN Gate Dielectric
- The Effects of Super-Steep-Retrograde Indium Channel Profile on Deep Submicron n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor
- Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
- Efficiency and Droop Improvement in InGaN/GaN Light-Emitting Diodes by Selective Carrier Distribution Manipulation
- The Role of a Resist During O2 Plasma Ashing and Its Impact on the Reliability Evaluation of Ultrathin Gate Oxides
- Triangular Current: Method for Measuring Hysteresis Loops of Ferroelectric Capacitors
- Electrical Characteristics of Thin HfO2 Gate Dielectrics Prepared Using Different Pre-Deposition Surface Treatments
- Analysis of Narrow Width Effects in Polycrystalline Silicon Thin Film Transistors
- Switching Current Study: Hysteresis Measurement of Ferroelectric Capacitors using Current–Voltage Measurement Method
- A Novel SiGe Raised Source/Drain Polycrystalline Silicon Thin-Film Transistor with Improved On-Current and Larger Breakdown Voltage
- Low-Pressure Crystallization of Sol–Gel-Derived PbZr0.52Ti0.48O3 Thin Films at Low Temperature for Low-Voltage Operation