Back-Gating Effects on the Ga_<0.1>In_<0.9>P/InP/InGaAs High-Electron-Mobility Transistor

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-07-15

著者

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• Lin K‐c

  National Chiao Tung Univ. Hsinchu Twn

• Chen P‐a

  Institute Of Electronics National Chiao Tung University

• Chen Po-an

  Institute Of Electronics National Chiao-tung University

• Chan S‐h

  Advanced Epitaxy Technol. Inc. Hsinchu Twn

• Chang Chun-yen

  Institute Of Electronics National Chiao Tung University

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• Chan Shih-hsiung

  Department Of Electrical Engineering National Cheng Kung University

• LIN Kun-Chuan

  Institute of Electronics, National Chiao-Tung University

• Chen Horng-dar

  Institute Of Electronics National Chiao-tung University

• WU Janne-Wha

  Institute of Electronics, National Chiao-Tung University and National Nano Device Laboratory

• WU Chang-Cherng

  Institute of Electronics, National Chiao-Tung University

• CHAN Shih-Hsiung

  Institute of Electronics, National Chiao-Tung University

• CHANG E-Yi

  Institute of Materials Science and Engineering, National Chiao-Tung University

• Chen Po-an

  Institute Of Electronics National Chiao Tung University

• Chang E-yi

  Institute Of Materials Science And Engineering National Chiao-tung University

• Wu J‐w

  National Sun Yat‐sen Univ. Kaohsiung Twn

• Wu Janne-wha

  Institute Of Electronics National Chiao-tung University

• Chang Chun-yen

  Institute Of Electronics National Chiao Tang University:national Nano-device Laboratories

• Wu Chang-cherng

  Institute Of Electronics National Chiao-tung University

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

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