A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1996-12-30

著者

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• CHANG Chun-Yen

  National Nano Device Laboratories

• Chang E‐y

  National Chiao Tung Univ. Hsinchu Twn

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• CHANG Edward

  Institute of Material Science and Engineering, National Chiao Tung University

• Lai Y‐l

  National Changhua Univ. Education Changhua Twn

• LAI Yeong-Lin

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• YANG Hung-Pin

  Opto-Electronics and Systems Laboratories, Industrial Technology Research Institute

• NAKAMURA K.

  National Nano Device Laboratories

• SHY S.L.

  National Nano Device Laboratories

• Lai Yeong-lin

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Yang Hung-pin

  Opto-electronics And Systems Laboratories Industrial Technology Research Institute

• Chang Edward

  Institute Of Material Science And Engineering National Chiao Tung University

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

• Chang Chun-Yen

  National Chiao Tung University, Hsinchu, Taiwan, 30050, Republic Of China

関連論文

• A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
• Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
• Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
• Characterization of RF LDMOS Transistors with Different Layout Structures
• Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
• Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• Passivation of GaAs Power Field-Effect Transistor Using Electron Cyclotron Resonance Chemical Vapor Deposition Silicon Nitride Technique
• High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well Power High-Electron-Mobility Transistors for 2.4 V Medium-Power Wireless Communication Applications
• A Simple Fabrication Process of T-Shaped Gates Using a Deep-UV/Electron-Beam/Deep-UV : Tri-Layer Resist System and Electron-Beam Lithography
• A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
• TiWN Schottky Contacts to n-Ga_In_P
• Impact of Thermal Stability on the Characteristics of Complementary Metal Oxide Semiconductor Transistors with TiN Metal Gate
• Plasma-Process-Induced Damage in Sputtered TiN Metal-Gate Capacitors with Ultrathin Nitrided Oxides
• The Combined Effects of Nitrogen Implantation at S/D Extension and N_2O Oxide on 0.18μm N- and P-Metal Oxide Field Effect Transistors (MOSEETs)
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• Characterization of Antenna Effect by Nondestructive Gate Current Measurement
• Temperature Influence on the Generalized Einstein Relation for Degenerate Semiconductors with Arbitrary Band Structures
• Effect of Interfacial Oxide on Static and High-Frequency Performance in Poly-Emitter Bipolar Transistors Under High-Level Injection
• Effect of Ge Concentration on Static and Microwave Performances in Ge_xSi_ Heterojunction Bipolar Transistors under High-Level Injection
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
• A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
• CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
• Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
• Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
• Epitaxy of Si_Ge_x by Ultrahigh-Vacuum Chemical Vapor Deposition Using Si_2H_6 and GeH_4
• Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• Dual-Band Mixer Design(RF, Analog Circuit and Device Technologies)
• A CMOS Low-Noise Amplifier for Ultra Wideband Wireless Applications(Wide Band Systems)
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
• Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
• Back-Gating Effects on the Ga_In_P/InP/InGaAs High-Electron-Mobility Transistor
• Cation Source Dependence of Ga_In_P Growth Rate by Low-Pressure Metalorganic Chemical Vapor Deposition
• Low-Voltage-Operation High-Power-Density AlGaAs/InGaAs Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor for Personal Handy-Phone Handset Application : Semiconductors
• Characterization and Reliability of Lightly-Doped-Drain Polysilicon Thin-Film Transistors with Oxide Sidewall Spacer Formed by One-Step Selective Liquid Phase Deposition
• Dimensional Effects on the Drain Current of N-and P-Channel Polycrystalline Silicon Thin Film Transistors
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• New Polysilicon-Oxide-Nitride-Oxide-Silicon Electrically Erasable Programmable Read-only Memory Device Approach for Eliminating Off-Cell Leakage Current
• Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
• Optimization of Short Channel Effect With Arsenic Halo Implant through Polysilicon Gate : Semiconductors
• Shallow-Trench Isolation With Raised-Field-Oxide Structure
• Effect of Hydrothermal Treatment on Microstructural Feature and Bonding Strength of Plasma-Sprayed Hydroxyapatite on Ti-6Al-4V
• The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
• A Study on Bilateral Latch-Up Self-Triggering in Complementary Metal-Oxide-Semiconductor Protection Circuits
• The Behavior of Bilateral Latch-Up Triggering in VLSI Electro Static Discharge Damage Protection Circuits
• Charge Loss Due to AC Program Disturbance Stresses in EPROMs
• Trarnsient and Steady State Carrier Transport under High Field Stressesin SONOS EEPROM Device
• A method for suppressing deep-level emission in ZnSe/Ge/Ge_xSi_/Si structure
• New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
• Controlled Placement of Self-Organized Ge Dots on Patterned Si(001) Surfaces
• Flower-Like Distribued Self-Oranized Ge Dots on Patterned Si (001) Substrates
• Novel I-Line Phase Shift Mask Technique for Submicron T-Shaped Gate Formation
• Fabrication of Photonic Crystals Using Nanoimprint Lithography
• Effective Prevention of Single Event Burnout for N-Channel Power MOSFETs
• Characteristics of RF MEMS Switches for Communication Systems
• Investigation of Structures of Microwave MEMS Switches
• A Broadband and Low Cost Monolithic BiCMOS Tuner Chip
• Ti/Pt/Ti/Cu-Metallized Interconnects for GaN High-Electron-Mobility Transistors on Si Substrate
• Mode Control of Vertical-Cavity Surface-Emitting Lasers by Germanium Coating
• Investigation of Structures of Microwave Microelectromechanical-System Switches by Taguchi Method
• Publisher's Note: "Characteristics of Radio-Frequency Microelectromechanical-System Switches for Communication Systems"
• Characteristics of Radio-Frequency Microelectromechanical-System Switches for Communication Systems

もっと見る 閉じる

スポンサーリンク