Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1997-03-15
著者
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Chang C‐y
Department Of Electronics Engineering National Chiao Tung University
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Huang Guo-wei
National Nano Device Laboratories
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CHANG Chun-Yen
Department of Electronics Engineering, National Chiao Tung University
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Chien C‐h
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Chang Chun-yen
Instiute Of Electronics National Chiao-tang University
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Chang Chun-yen
Department Of The Electro-optical Engineering National Chiao Tung University
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TSAI Wen-Chung
Department of Electronic Engineering and Institute of Electronics, National Chiao-Tung University
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HUANG Guo-Wei
Department of Electronic Engineering and Institute of Electronics,National Chiao-Tung University
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FANG Frank-Fu
Center of Condensed Matter Sciences, National Taiwan University
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CHANG Yang-Hueng
Department of Physics, National Taiwan University
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HUANG Cheua-Feng
Department of Physics, National Taiwan University
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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Tsai Wen-chung
Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University
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Huang Cheua-feng
Department Of Physics National Taiwan University
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Fang Frank-fu
Center Of Condensed Matter Sciences National Taiwan University
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Huang G‐w
National Nano Device Laboratories
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Chang C‐y
Department Of Electronics Engineering Nation Chiao Tung University
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Chang Yang-hueng
Department Of Physics National Taiwan University
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