Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors

スポンサーリンク

概要

• 論文の詳細を見る

• In this work, the effects of temperature on the DC and RF characteristics of lateral-diffused metal–oxide–semiconductor (LDMOS) transistors were studied. Devices with different layout structures were fabricated using a 40 V LDMOS process. The temperature coefficients of the threshold voltage and channel mobility are negative and their values are similar for devices with fishbone and ring structures. In addition, we found that both the cutoff frequency ($ f_{\text{T}}$) and the maximum oscillation frequency ($ f_{\text{max}}$) decrease with increasing temperature. The variations of $ f_{\text{T}}$ with different temperatures are not only affected by the change in transconductance but also affected by the drain resistance. Finally, the temperature behaviors of $S$-parameters were measured, and the ring structure showed less $S_{22}$ variation with different temperatures than the fishbone structure. We extracted the model parameters of the devices to explain this observation.

• 2008-04-25

著者

• Huang Guo-wei

  National Nano Device Laboratories

• Yang Yu-chi

  United Microelectronics Corporation

• CHEN Kun-Ming

  National Nano Device Laboratories

• CHENG Eric

  United Microelectronics Corporation

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Hu Hsin-hui

  Department Of Electronics Engineering National Chiao Tung University

• Hu Hsin-Hui

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Chien Alex

  United Microelectronics Corporation, Hsinchu 300, Taiwan

• Yang Yu-Chi

  United Microelectronics Corporation, Hsinchu 300, Taiwan

• Chen Kun-Ming

  National Nano Device Laboratories, Hsinchu 300, Taiwan

• Cheng Eric

  United Microelectronics Corporation, Hsinchu 300, Taiwan

関連論文

• A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
• Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
• Characterization of RF LDMOS Transistors with Different Layout Structures
• Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
• Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• A High-Power-Density and High-Efficiency Atomic-Planar-Doped AlGaAs/InGaAs Quantum-Well HEMT for 2.4V Medium-Power Wireless Communication Applications
• The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
• The Effects of Shallow Germanium Halo Doping on N-Channel Metal Oxide Semiconductor Field Effect Transistors
• A 5.2GHz 47dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35μm SiGe HBT Technology(Analog Circuit Techniques and Related Topics)
• A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35μm SiGe HBT Technology(RF, Analog Circuit and Device Technologies)
• Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
• A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
• CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
• P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
• Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
• Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
• Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
• Combination of Chemical Mechanical Polishing and Ultrahigh Vacuum Chemical Vapor Deposition Techniques to Fabricate Polycrystalline Thin Film Transistors
• Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
• Characterization of Improved AlGaAs/GaAs Resonant Tunneling Heterostructure Bipolar Transistors
• Interfacial Abruptness in Si/SiGe Heteroepitaxy Grown by Ultrahigh Vacuum Chemical Vapor Deposition
• Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
• Influence of Metalorganic Sources on the Composition Uniformity of Selectively Grown Ga_XIn_P
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
• Effects of O_2- and N_2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
• Comparison of N_2 and NH_3 Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors
• Shallow-Trench Isolation With Raised-Field-Oxide Structure
• The Elimination of Inversion Domains in MBE-GaN Grown Using Low Temperature Nitridation
• Growth of GaN on Si (111) using simultaneous AlN/α-Si_3N_4 buffer structure
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• New Nanometer T-Gate Fabricated by Thermally Reflowed Resist Technique : Instrumentation, Measurement, and Fabrication Technology
• Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector Voltages
• High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devi
• 3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiN_x Stressor
• The Port-to-Port Isolation the Downconversion P-Type Micromixer Using Different N-Well Topologies(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
• The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
• Design and Analysis of On-Chip Tapered Transformers for Silicon RFICs
• Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
• Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
• Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining
• A Novel Cost Effective Double Reduced Surface Field Laterally Diffused Metal Oxide Semiconductor Design for Improving Off-State Breakdown Voltage
• Large Area of Ultraviolet GaN-Based Photonic Quasicrystal Laser
• Light Output Enhancement of GaN-Based Light-Emitting Diodes by Optimizing SiO2 Nanorod-Array Depth Patterned Sapphire Substrate
• Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
• Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
• Double $\delta$-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application
• Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
• Performance Enhancement by Local Strain in $\langle 110\rangle$ Channel n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (111) Substrate
• Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures
• Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
• Growth of High-Quality Ge Epitaxial Layers on Si (100)
• Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors
• Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer
• Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
• Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal–Oxide–Semiconductor Amplifiers
• Systematical Study of Reliability Issues in Plasma-Nitrided and Thermally Nitrided Oxides for Advanced Dual-Gate Oxide p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
• Characterization of Polycrystalline Silicon Thin Film Transistors Fabricated by Ultrahigh-Vacuum Chemical Vapor Deposition and Chemical Mechanical Polishing
• Design and Analysis of On-Chip Tapered Transformers for Silicon Radio-Frequency Integrated Circuits
• A Monolithic SiGe Heterojunction Bipolar Transistor Gilbert Upconverter with Inductor–Capacitor Current Mirror Load and Lumped-Element Rat-Race Balun
• Cost-Effective and Self-Textured Gallium-Doped Zinc Oxide Front Contacts for Hydrogenated Amorphous Silicon Thin-Film Solar Cells

もっと見る 閉じる

スポンサーリンク