Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining

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概要

• 論文の詳細を見る

• It is demonstrated that the appropriate external mechanical stress applied by the conventional IC chip’s package straining can enhance device and circuit performance. A drain current enhancement of 4.9% at saturation is observed for 90-nm-node n-channel metal oxide semiconductor field effect transistor (nMOSFET) under a biaxial tensile strain of 0.096%. The current enhancement is nearly independent of gate width for 90-nm-node logic devices. Moreover, there is a 2.3% speed enhancement for a 90 nm-node logic ring oscillator using a parallel layout under the same biaxial tensile strain of 0.096%.

• 2008-04-25

著者

• Tsen Huan-chiu

  United Microelectronic Corporation (umc)

• CHEN Kun-Ming

  National Nano Device Laboratories

• Chung Lee

  United Microelectronic Corporation (umc)

• Huang Sheng-yi

  United Microelectronic Corporation (umc)

• Liao Wen-shiang

  United Microelectronic Corporation (umc)

• SHIH Tommy

  United Microelectronic Corporation (UMC)

• Chung Lee

  United Microelectronics Corp. (UMC), No. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 30078, R.O.C.

• Chen Kun-Ming

  National Nano Device Laboratories (NDL), No. 26, Prosperity Rd. I, Hsinchu Science Park, Taiwan 30078, R.O.C.

• Tang Mao-Chyuan

  United Microelectronics Corp. (UMC), No. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 30078, R.O.C.

• Liaw Yue-Gie

  Silicon Integrated Systems Corp. (SiS), No. 16, Creation Rd. I, Hsinchu Science Park, Taiwan 30077, R.O.C.

• Liu Chee

  Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan 10617, R.O.C.

• Huang Sheng-Yi

  United Microelectronics Corp. (UMC), No. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 30078, R.O.C.

• Tsen Huan-Chiu

  United Microelectronics Corp. (UMC), No. 3, Li-Hsin Rd. II, Hsinchu Science Park, Taiwan 30078, R.O.C.

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