Current and Speed Enhancements at 90nm Node through Package Strain

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• HUANG Sheng-Yi

  United Microelectronics Corporation (UMC)

• LIAO Wen-Shiang

  United Microelectronics Corporation (UMC)

• Huang Sheng-yi

  United Microelectronic Corporation (umc)

• Liu Chee

  National Taiwan University Graduate Institute Of Electronics Engineering

• Liao Wen-shiang

  United Microelectronic Corporation (umc)

• SHIH Tommy

  United Microelectronic Corporation (UMC)

関連論文

• The Impact of Mixed-mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe HBTs
• Current and Speed Enhancements at 90nm Node through Package Strain
• 3D Multi-gate NMOS Mobility Enhancement with High-tensile ILD-SiN_x Stressor
• Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
• Logic 90 nm n-Channel Field Effect Transistor Current and Speed Enhancements Through External Mechanical Package Straining
• Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors
• Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer

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