Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors

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概要

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• This paper presents small-signal and noise modeling for radio-frequency (RF) silicon-on-insulator (SOI) dynamic threshold voltage (DT) metal–oxide–semiconductor field-effect transistors (MOSFETs). The inherent body parasitics, such as source- and drain-side junction capacitances, and access body resistance have been incorporated in this model. In addition, the analytical equations useful for parameter extractions are derived. The modeling results show good agreements with the measured data both in RF small-signal and noise aspects up to 12 GHz. Besides, we have made comparisons of important model parameters for DT and standard MOSFETs. The extracted parameters show reasonable trend with respect to applying voltages and channel lengths, which reveals the accuracy of the extraction results using our proposed method.

• 2009-04-25

著者

• Huang Guo-wei

  National Nano Device Laboratories

• Su Pin

  Department Of Electronics Engineering National Chiao Tung University

• CHEN Kun-Ming

  National Nano Device Laboratories

• HUNG Cheng-Chou

  United Microelectronics Corporation (UMC)

• Huang Sheng-yi

  United Microelectronic Corporation (umc)

• Wang Sheng-Chun

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Hung Cheng-Chou

  United Microelectronics Corporation, Hsinchu 300, Taiwan

• Huang Sheng-Yi

  United Microelectronics Corporation, Hsinchu 300, Taiwan

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