High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation(Active Devices and Circuits)(<Special Section>Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devi
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概要
- 論文の詳細を見る
High-frequency characteristics of SiGe heterojunction bipolar transistors with different emitter sizes are studied based on pulsed measurements. Because the self-heating effect in transistors will enhance the Kirk effect, as the devices operate in high current region, the measured cutoff frequency and maximum oscillation frequency decrease with measurement time in the pulsed duration. By analyzing the equivalent small- signal device parameters, we know the reduction of cutoff frequency and maximum oscillation frequency is attributed to the reduction of transconductance and the increase of junction capacitances for fixed base-emitter voltage, while it is only attributed to the degradation of transconductance for fixed collector current. Besides, the degradation of high-frequency performance due to self-heating effect would be improved with the layout design combining narrow emitter finger and parallel-interconnected subcells structure.
- 社団法人電子情報通信学会の論文
- 2004-05-01
著者
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Huang Guo-wei
National Nano Device Laboratories
-
CHEN Kim-Ming
National Nano Device Laboratories
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Huang G‐w
National Nano Device Laboratories
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Chang Li-hsin
National Nano Device Laboratories
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Tseng Hua-chou
United Microelectronics Corporation
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HSU Tsun-Lai
United Microelectronics Corporation
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