Huang Guo-wei | National Nano Device Laboratories

スポンサーリンク

概要

関連著者

もっと見る

著作論文

A New Method to Extract MOSFET Threshold Voltage, Effective Channel Length, and Channel Mobility Using S-parameter Measurement(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millim
Analysis of Temperature Effects on the High-Frequency Characteristics of RF LDMOS Transistors
Characterization of RF LDMOS Transistors with Different Layout Structures
Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
Degradation of Low-Frequency Noise in PD SOI MOSFETs after Hot-Carrier Stress
Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
A 5.2GHz 47dB Image Rejection Double Quadrature Gilbert Downconverter Using 0.35μm SiGe HBT Technology(Analog Circuit Techniques and Related Topics)
A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35μm SiGe HBT Technology(RF, Analog Circuit and Device Technologies)
Noise Parameters Computation of Microwave Devices Using Genetic Algorithms(Active Circuits & Antenna, Recent Technologies of Microwave and Millimeter-Wave Devices Focusing on Miniaturization and Advancement in Performance with Their Appli
A Novel Approach for Parameter Determination of HBT Small-Signal Equivalent Circuit(Model, Analog Circuit and Device Technologies)
CMOS RFIC : Application to Wireless Transceiver Design (Special Issue on Low-Power High-Speed CMOS LSI Technologies)
P-Channel Metal Oxide Semiconductor Field Effect Transistors with Polycrystalline-Si_Ge_x Gate Grown by Ultra-High Vacuum Chemical Vapor Deposition System
Direct Oxidation of Si_Ge_x Layers Using Vacuum-Ultra-Violet Light Radiation in Oxygen
Very High Hole Mobility in P-Type Si/SiGe Modulation-Doped Heterostructures
Characterization of Si/SiGe Strained-Layer Superlattices Grown by an Ultrahigh Vacuum/Chemical Vapor Deposition Technique
Low-Temperature Epitaxial Growth of Silicon and Silicon-Germanium Alloy by Ultrahigh-Vacuum Chemical Vapor Deposition
Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
Pulsed Characteristics of Microwave SiGe Heterojunction Bipolar Transistors Operated at High Collector Voltages
High-Frequency Characteristics of SiGe Heterojunction Bipolar Transistors under Pulsed-Mode Operation(Active Devices and Circuits)(Advances in Characterization and Measurement Technologies for Microwave and Millimeter-Wave Materials, Devi
The Port-to-Port Isolation the Downconversion P-Type Micromixer Using Different N-Well Topologies(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices(Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Design and Analysis of On-Chip Tapered Transformers for Silicon RFICs
Investigation of Hot-Carrier Stress Effect on High-Frequency Performance of Laterally Diffused Metal-Oxide-Semiconductor Transistors (Special Issue : Solid State Devices and Materials (1))
Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal–Oxide–Semiconductor Field-Effect Transistors
Analysis of Temperature Effects on High-Frequency Characteristics of RF Lateral-Diffused Metal–Oxide–Semiconductor Transistors
Radio-Frequency Silicon-on-Insulator Modeling Considering the Neutral-Body Effect
Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications
Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures
Low-Frequency Noise in Partially Depleted SOI MOSFETs Operating from Linear Region to Saturation Region at Various Temperatures
Effect of Mixed-Mode Electrical Stress on High-Frequency and RF Power Characteristics of SiGe Hetero-Junction Bipolar Transistors
Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer
Degradation of Low-Frequency Noise in Partially Depleted Silicon-on-Insulator Metal Oxide Semiconductor Field-Effect Transistors by Hot-Carrier Stress
Implementation of Surface Acoustic Wave Vapor Sensor Using Complementary Metal–Oxide–Semiconductor Amplifiers
Design and Analysis of On-Chip Tapered Transformers for Silicon Radio-Frequency Integrated Circuits
A Monolithic SiGe Heterojunction Bipolar Transistor Gilbert Upconverter with Inductor–Capacitor Current Mirror Load and Lumped-Element Rat-Race Balun

もっと見る

スポンサーリンク