Chen Yu-Ting | Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

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概要

関連著者

Huang Guo-wei
National Nano Device Laboratories
CHEN Kun-Ming
National Nano Device Laboratories
Liao Wen-shiang
United Microelectronic Corporation (umc)
Huang Fon-Shan
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan
Liao Wen-Shiang
United Microelectronics Corporation (UMC), Hsinchu 30078, Taiwan
Chen Yu-Ting
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
Chen Kun-Ming
National Nano Device Laboratories, Hsinchu 30078, Taiwan
Huang Fon-Shan
Institute of Electronics Engineering, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan
Huang Guo-Wei
National Nano Device Laboratories, Hsinchu 30078, Taiwan
Huang Fon-Shan
Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

著作論文

Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer

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