Low-Frequency Noise Characteristics of SiGe p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Compressive Interlayer-Dielectric-SiNx Stressing Layer

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概要

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• Low-frequency noise characteristics of SiGe p-channel metal–oxide–semiconductor field-effect transistors (PMOSFETs) with a highly compressive interlayer-dielectric-SiNx (ILD-SiNx) stressing layer are studied. Experimental results predict that the SiGe-channel device with a highly compressive stressing layer has a lower noise magnitude than the conventional SiGe-channel and bulk-Si devices, irrespective of strain strength in our PMOSFET devices. This noise improvement can be attributed to the lower effective oxide trap densities. After extracting the effective trap densities from the low-frequency noise data, we found that the high-compressive SiGe-channel device has lower trap densities. The lower trap densities may be due to the passivation of gate dielectric defects by hydrogen species during high-compressive interlayer-dielectric-SiNx (ILD-SiNx) stressing layer deposition.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Huang Guo-wei

  National Nano Device Laboratories

• CHEN Kun-Ming

  National Nano Device Laboratories

• Liao Wen-shiang

  United Microelectronic Corporation (umc)

• Huang Fon-Shan

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

• Liao Wen-Shiang

  United Microelectronics Corporation (UMC), Hsinchu 30078, Taiwan

• Chen Yu-Ting

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

• Chen Kun-Ming

  National Nano Device Laboratories, Hsinchu 30078, Taiwan

• Huang Fon-Shan

  Institute of Electronics Engineering, National Tsing Hua University, 101, Sec. 2, Kuang-Fu Road, Hsinchu 30013, Taiwan

• Huang Guo-Wei

  National Nano Device Laboratories, Hsinchu 30078, Taiwan

• Huang Fon-Shan

  Institute of Electronics Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan

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