The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices(<Special Section>Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
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概要
- 論文の詳細を見る
A selectively ion-implanted collector (SIC) is implemented in a 0.8μm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f_t and f_<max> than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The f_t is 7.8GHz and f_<max> is 9.5GHz for the SIC BJT device while the f_t is 7.2GHz and f_<max> is 4.5GHz for the FIC BJT device when biased at V_<ce>=3.6V and J_c=0.07mA/μm^2. The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.
- 社団法人電子情報通信学会の論文
- 2006-04-01
著者
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Huang Guo-wei
National Nano Device Laboratories
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Su Jen-yi
Department Of Communication Engineering National Chiao Tung University
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MENG Chinchun
Department of Communication Engineering, National Chiao Tung University
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Meng Chinchun
Department Of Communication Engineering National Chiao Tung University
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TSOU Bo-Chen
Department of Electrical Engineering, National Chung-Hsing University
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Tsou Bo-chen
Department Of Electrical Engineering National Chung-hsing University
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