Characterization of RF Lateral-Diffused Metal–Oxide–Semiconductor Field-Effect Transistors with Different Layout Structures

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概要

• 論文の詳細を見る

• The DC and RF characteristics of lateral-diffused metal–oxide–semiconductor (LDMOS) transistors with different layout structures were studied. The devices were fabricated using a 0.5 μm LDMOS process. The ring and fishbone structures, which are used widely in power devices, were designed and analyzed. We found that the transconductance, on-resistance, cutoff frequency and maximum oscillation frequency were improved using the ring structure, due to a larger equivalent $W/L$ and lower drain parasitic resistance. In addition, the self-heating effect of LDMOS transistors was also investigated by measuring the pulsed current–voltage ($I$–$V$) and pulsed RF characteristics. From the measured results, the ring structure appeared to be a better layout design for RF LDMOS transistors.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-04-30

著者

• Huang Guo-wei

  National Nano Device Laboratories

• Yang Yu-chi

  United Microelectronics Corporation

• CHEN Kun-Ming

  National Nano Device Laboratories

• LU Yii-Chian

  United Microelectronics Corporation

• CHENG Eric

  United Microelectronics Corporation

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Hu Hsin-hui

  Department Of Electronics Engineering National Chiao Tung University

• Chang Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan

• Yang Yu-Chi

  United Microelectronics Corporation, Hsinchu 300, Taiwan

• Cheng Eric

  United Microelectronics Corporation, Hsinchu 300, Taiwan

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