Double $\delta$-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application
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概要
- 論文の詳細を見る
A high linearity and high efficiency enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) for single supply operation has been developed. The low voltage operation is achieved by the very low knee voltage of the device and the linearity is improved by the optimizing concentrations of the two $\delta$-doped layers. Biased at drain-to-source voltage $V_{\text{DS}} = 2$ V, the fabricated $0.5 \times 200$ μm2 device exhibited a maximum transconductance of 448 mS/mm. The measured minimum noise figure (NFmin) was 0.86 dB with 12.21 dB associated gain at 10 GHz. The device shows a high output third-order intercept point (OIP3)-$P_{1\,\text{dB}}$ of 13.2 dB and a high power efficiency of 35% when under wideband code-division multiple-access (W-CDMA) modulation signal.
- Japan Society of Applied Physicsの論文
- 2006-09-25
著者
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Chang Chun-yen
Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity
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Chang Edward-yi
Department Of Materials Science And Engineering And Microelectronics And Information System Research
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Hsu Heng-tung
Department Of Communications Engineering Yuan Ze University
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Chang Edward-Yi
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Chu Li-Hsin
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Lee Tser-Lung
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Chen Sze-Hung
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Lien Yi-Chung
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Hsu Heng-Tung
Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.
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Hsu Heng-Tung
Department of Communications Engineering and Communication Research Center, Yuan Ze University, Chunli 320, Taiwan
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