Silicon Nitride Nanopillars and Nanocones Formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application

スポンサーリンク

概要

• 論文の詳細を見る

• The external quantum efficiency of solar cells can be improved by using textured surface with minimum reflection. We have fabricated nanopillars and nanocone structures on silicon nitride surface by means of self-assembled nickel nano particle masks with single step inductively coupled plasma (ICP) ion etching and double step ICP etching, respectively. Thus, sub-wavelength nanopillar and nanocone-like structures displaying low reflectance were obtained readily without the need for any lithography equipment. The formation mechanism of nanopillar and nanocone like structures fabricated on silicon nitride surface has been discussed. The relationship of etching time with structure height and average reflectance spectra has been drawn.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-12-25

著者

• Li Yiming

  Department Of Communication Engineering National Chiao Tung University

• Chang Edward-yi

  Department Of Materials Science And Engineering And Microelectronics And Information System Research

• Tinh Tran

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

• Sahoo Kartika

  Department of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan

• Lin Men-Ku

  Department of Materials Science and Engineering, National Hsing-Hua University, Hsinchu 300, Taiwan

• Huang Jin-Hua

  Department of Materials Science and Engineering, National Hsing-Hua University, Hsinchu 300, Taiwan

関連論文

• A Quantum Mechanical Corrected SPICE Model for Ultrathin Oxide MOSFETs' Gate Tunneling Current Simulation
• Electrostatic Discharge Protection under Pad Design for Copper-Low-K VLSI Circuits
• Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors
• A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs Using Parallel Adaptive Technique(Scientific and Engineering Computing with Applications)(Hardware/Software Support for High Performance Scientific and Engine
• Variation of Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates
• Experimental and Theoretical Examination of Field Emission in Surface Conduction Electron-Emitter Displays
• Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications
• $\mbi{k}{\cdot}\mbi{p}$ Zincblende Hamiltonian and Optical Matrix with Bulk Inversion Asymmetry
• Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current
• Transition Energies in Vertically Coupled Multilayer Nanoscale InAs/GaAs Semiconductor Quantum Dots with Different Structure Shapes
• Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots
• Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16nm Bulk FinFETs
• Analysis of Field Emission of Fabricated Nanogap in Pd Strips for Surface Conduction Electron-Emitter Displays
• An Intelligent Simulation-Based Optimization Technique for Integrated Circuit Design Automation : A Case Study of LNA Circuit Design
• Comparison of Threshold Voltage Fluctuations in Sub-45nm Planar MOSFET and Thin-Buried-Oxide SOI Devices
• A Novel Statistical Methodology for Sub-100nm MOSFET Fabrication Optimization and Sensitivity Analysis
• Comparison of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Single-, Double-, and Surrounding-Gate Field-Effect Transistors
• Growth of High-Quality In_Ga_N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
• Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
• General Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green's Function
• Double $\delta$-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application
• Study of Titanium Tungsten Nitride and Tungsten Nitride Schottky Contacts on n-GaN
• Silicon Nitride Nanopillars and Nanocones Formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application
• Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates
• Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications
• Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16 nm Bulk Fin-Type Field Effect Transistors
• InAs Thin-Channel High-Electron-Mobility Transistors with Very High Current-Gain Cutoff Frequency for Emerging Submillimeter-Wave Applications

もっと見る 閉じる

スポンサーリンク