Li Yiming | Department Of Communication Engineering National Chiao Tung University

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概要

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著作論文

A Quantum Mechanical Corrected SPICE Model for Ultrathin Oxide MOSFETs' Gate Tunneling Current Simulation
Electrostatic Discharge Protection under Pad Design for Copper-Low-K VLSI Circuits
Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors
A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs Using Parallel Adaptive Technique(Scientific and Engineering Computing with Applications)(Hardware/Software Support for High Performance Scientific and Engine
Variation of Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates
Experimental and Theoretical Examination of Field Emission in Surface Conduction Electron-Emitter Displays
$\mbi{k}{\cdot}\mbi{p}$ Zincblende Hamiltonian and Optical Matrix with Bulk Inversion Asymmetry
Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current
Transition Energies in Vertically Coupled Multilayer Nanoscale InAs/GaAs Semiconductor Quantum Dots with Different Structure Shapes
Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots
Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16nm Bulk FinFETs
Analysis of Field Emission of Fabricated Nanogap in Pd Strips for Surface Conduction Electron-Emitter Displays
An Intelligent Simulation-Based Optimization Technique for Integrated Circuit Design Automation : A Case Study of LNA Circuit Design
Comparison of Threshold Voltage Fluctuations in Sub-45nm Planar MOSFET and Thin-Buried-Oxide SOI Devices
A Novel Statistical Methodology for Sub-100nm MOSFET Fabrication Optimization and Sensitivity Analysis
Comparison of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Single-, Double-, and Surrounding-Gate Field-Effect Transistors
Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
General Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green's Function
Silicon Nitride Nanopillars and Nanocones Formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application
Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates
Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16 nm Bulk Fin-Type Field Effect Transistors

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