General Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green's Function
スポンサーリンク
概要
- 論文の詳細を見る
A theoretical method for the calculation of quantum transport in an ellipsoidal valley is presented. This method is developed using a non-equilibrium Green's function framework. Importantly, it is instructive that k_{z} is separated into two parts so that the wrong figure shape of the transmission coefficients does not exist. The L-electron effect on AlAs--GaAs--AlAs double barrier structures oriented in the [001], [111], and [110] growth directions is explored using the proposed method.
- 2011-06-25
著者
-
Li Yiming
Department Of Communication Engineering National Chiao Tung University
-
Lee Meng-en
Department Of Physics National Kaoshiung Normal University
-
Li Yiming
Department of Electrical Engineering, National Chiao Tung University, Hsinchu 300, Taiwan
-
Chen Chun-Nan
Quantum Engineering Laboratory, Department of Physics, Tamkang University, Tamsui, Taipei 251, Taiwan
-
Su Wei-Long
Department of Electronic Engineering, Lee-Ming Institute of Technology, Taishan Township, Taipei 243, Taiwan
-
Jen Jen-Yi
Quantum Engineering Laboratory, Department of Physics, Tamkang University, Tamsui, Taipei 251, Taiwan
-
Chen Chun-Nan
Quantum Engineering Lab., Department of Physics, Tamkang University, Tamsui Town, Taipei 251, Taiwan
-
Jen Jen-Yi
Quantum Engineering Lab., Department of Physics, Tamkang University, Tamsui Town, Taipei 251, Taiwan
関連論文
- A Quantum Mechanical Corrected SPICE Model for Ultrathin Oxide MOSFETs' Gate Tunneling Current Simulation
- Electrostatic Discharge Protection under Pad Design for Copper-Low-K VLSI Circuits
- Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors
- A Two-Dimensional Quantum Transport Simulation of Nanoscale Double-Gate MOSFETs Using Parallel Adaptive Technique(Scientific and Engineering Computing with Applications)(Hardware/Software Support for High Performance Scientific and Engine
- Variation of Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates
- Experimental and Theoretical Examination of Field Emission in Surface Conduction Electron-Emitter Displays
- $\mbi{k}{\cdot}\mbi{p}$ Zincblende Hamiltonian and Optical Matrix with Bulk Inversion Asymmetry
- Quantum Mechanical Corrected Simulation Program with Integrated Circuit Emphasis Model for Simulation of Ultrathin Oxide Metal-Oxide-Semiconductor Field Effect Transistor Gate Tunneling Current
- Carrier Relaxation of ZnCdSe/ZnSe Quantum Wells
- Transition Energies in Vertically Coupled Multilayer Nanoscale InAs/GaAs Semiconductor Quantum Dots with Different Structure Shapes
- Effect of Shape and Size on Electron Transition Energies of InAs Semiconductor Quantum Dots
- Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16nm Bulk FinFETs
- Analysis of Field Emission of Fabricated Nanogap in Pd Strips for Surface Conduction Electron-Emitter Displays
- Crystal-Field and Strain Effects on Minimum-Spin-Splitting Surfaces in Bulk Wurtzite Materials
- An Intelligent Simulation-Based Optimization Technique for Integrated Circuit Design Automation : A Case Study of LNA Circuit Design
- Comparison of Threshold Voltage Fluctuations in Sub-45nm Planar MOSFET and Thin-Buried-Oxide SOI Devices
- A Novel Statistical Methodology for Sub-100nm MOSFET Fabrication Optimization and Sensitivity Analysis
- Comparison of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Single-, Double-, and Surrounding-Gate Field-Effect Transistors
- Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
- General Expressions for Ellipsoidal-Valley Quantum Transport in Arbitrary Growth Direction: Non-Equilibrium Green's Function
- Hot Carrier Cooling Study of ZnCdSe Epilayers
- Silicon Nitride Nanopillars and Nanocones Formed by Nickel Nanoclusters and Inductively Coupled Plasma Etching for Solar Cell Application
- Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates
- Discrete-Dopant-Fluctuated Transient Behavior and Variability Suppression in 16-nm-Gate Complementary Metal–Oxide–Semiconductor Field-Effect Transistors
- Discrete-Dopant-Fluctuated Threshold Voltage Roll-Off in Sub-16 nm Bulk Fin-Type Field Effect Transistors