Comparison of Random Dopant-Induced Threshold Voltage Fluctuations in Nanoscale Single-, Double-, and Surrounding-Gate Field Effect Transistors

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• LI Yiming

  Department of Nano Device Technology, National Nano Device Laboratories

• Li Yiming

  Department Of Communication Engineering National Chiao Tung University

• Yu Shao-ming

  Microelectronics And Information Systems Research Center National Chiao Tung University

• HSIAO Ching-Feng

  Microelectronics and Information Systems Research Center, National Chiao Tung University

• Hsiao Ching-feng

  Microelectronics And Information Systems Research Center National Chiao Tung University

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