Comparison of Random-Dopant-Induced Threshold Voltage Fluctuation in Nanoscale Single-, Double-, and Surrounding-Gate Field-Effect Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-09-15
著者
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LI Yiming
Department of Nano Device Technology, National Nano Device Laboratories
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YU Shao-Ming
Department of Computer and Information Science, National Chiao Tung University
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Yu Shao-ming
Department Of Computer And Information Science National Chiao Tung University
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