Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Lu Hsiao-mei
Department Of Bioengineering University Of Illinois At Chicago
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Lu Hsiao-mei
Department Of Bioengineering University Of Illinois
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LI Yiming
Department of Nano Device Technology, National Nano Device Laboratories
関連論文
- An Investigation of Magnetic Field Effects on Energy States for Nanoscale InAs/GaAs Quantum Rings and Dots(the IEEE International Conference on SISPAD '02)
- Geometric Variations and Magnetic Field Effects on Electron Energy States of InAs/GaAs Quantum Rings
- Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
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- Variation of Field Emission Property of Carbon Nanotube Field Emitters in Triode Structure Fabricated with Anodic Aluminum Oxide Templates
- Experimental and Theoretical Examination of Field Emission in Surface Conduction Electron-Emitter Displays
- Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
- Geometric Variations and Magnetic Field Effects on Electron Energy States of InAs/GaAs Quantum Rings