Geometric Variations and Magnetic Field Effects on Electron Energy States of InAs/GaAs Quantum Rings

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-04-30

著者

• LI Yiming

  National Nano Device Labs.

• Lu Hsiao-mei

  Department Of Bioengineering University Of Illinois At Chicago

関連論文

• Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors
• An Investigation of Magnetic Field Effects on Energy States for Nanoscale InAs/GaAs Quantum Rings and Dots(the IEEE International Conference on SISPAD '02)
• Geometric Variations and Magnetic Field Effects on Electron Energy States of InAs/GaAs Quantum Rings
• Electron Transition Energy for Vertically Coupled InAs/GaAs Semiconductor Quantum Dots and Rings
• Optimization of the Anti-Punch-Through Implant for Electrostatic Discharge Protection Circuit Design

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