Hot Carrier Degradations of Dynamic Threshold Silicon on Insulator p-Type Metal-Oxide-Semiconductor Field Effect Transistors
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-15
著者
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Huang C‐y
National Chiao Tung Univ. Hsinchu Twn
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Huang T‐y
National Chiao Tung Univ. Hsinchu Twn
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HUANG Tiao-Yuan
Department of Electronics Engineering, National Chiao Tung University
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Lee Y‐j
National Chiao Tung Univ. Hsinchu Twn
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Huang Chun-yang
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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CHAO Tien-Sheng
Department of Electrophysics, National Chiao Tung University
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LEE Yao-Jen
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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LIN Horng-Chih
National Nano Device Labs.
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LI Yiming
National Nano Device Labs.
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Huang T-y
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Li Y
National Nano Device Labs.
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Lee Yao-jen
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Lin Horng-chih
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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