Turnaround Phenomenon of Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Negative Bias Stress
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-15
著者
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Huang C‐y
Department Of Electronic Engineering Kun Shan University Of Technology
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Huang C‐y
National Chiao Tung Univ. Hsinchu Twn
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Huang Chi-yen
Department Of Electronic Engineering Kun Shan University Of Technology
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Chen H‐c
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Cheng H‐c
National Tsing Hua Univ. Hsinchu Twn
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Cheng Huang‐chung
Nano Electronics And Display Technology Lab. Department Of Electronics Engineering And Institute Of
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CHENG Huang-Chung
Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University
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Teng Teh-hung
Department Of Electronics Engineering And Institute Of Electronics Semiconductor Research Center Nat
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Yang Cheng-jer
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University
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Cheng Huang-chung
Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University
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HUANG Chun-Yao
Department of Electronics Engineering and Institute of Electronics, Semiconductor Research Center, N
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TSAI Jun-Wei
Department of Electronics Engineering and Institute of Electronics, Semiconductor Research Center, N
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Tsai Jun-wei
Department Of Electronics Engineering And Institute Of Electronics Semiconductor Research Center Nat
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