The Reliability Improvements of Carbon Nanotubes Emitters by Utilizing an Fe–Ti Codeposited Catalyst

スポンサーリンク

概要

• 論文の詳細を見る

• In this report, carbon nanotubes (CNTs) partially immersed into the codeposited metal layer have been synthesized by utilizing an Fe–Ti codeposited catalyst in a thermal-chemical vapor deposition system. This structure could enlarge the contact area between CNTs and substrates to provide better adhesion properties than that in the case of CNTs synthesized from a pure Fe film. Therefore, an abrupt decrease in emission current due to mechanical destruction at a high electric field and a gradual degradation in emission current due to Joule heating were remarkably suppressed. A stable emission current of about 30 mA/cm2 at 7.7 V/μm for 2,500 s was obtained without obvious degradation.

• 2007-08-15

著者

• Shiu Jiun-kai

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Chang Yao-ren

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Chang Pei-chi

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Lin Kao-chao

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Lai Rui-ling

  Department Of Electronics Engineering And Institute Of Electronics National Chiao-tung University

• Lai Rui-Ling

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Juan Chuan-Pin

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lee Chien-Yin

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chen Shia-Wei

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Cheng Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Chang Pei-Chi

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Lin Kao-Chao

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

• Shiu Jiun-Kai

  Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C.

関連論文

• Microcrystalline SiC Films Grown by Electron Cyclotron Resonance Chemical Vapor Deposition at Low Temperatures
• A Quasi-planar Thin Film Field Emission Diode
• Improvement of Luminescent Uniformity via Synthesizing the Carbon Nanotubes on a Fe-Ti Co-deposited Catalytic Layer
• Field Emission Improvement from Pillar Array of Aligned Carbon Nanotubes
• Improvement of Breakdown Field of Carbon Nanotubes by a Ti-Capping Layer on Catalyst Nanopaticles
• Constraining the Direction of Carbon Nanotubes by Oxide Capping Layer
• Fabrication and Characterization of Lateral Field Emission Device Based On Carbon Nanotubes
• Improvement of Field Emission Characteristics of Carbon Nanotubes by Excimer Laser Treatment
• A Field-Emission Device with Novel Self-Focus Gate Structure
• High-Performance LTPS-TFTs Fabricated by Continuous Wave Laser Annealing
• Field-Emission Properties of Aligned Carbon Nanotubes
• Fabrication and Characterization of Various Carbon-Clad Silicon Microtips with Ultra-Small Tip Radii
• Effects of Helicon-Wave-Plasma Etching on the Charging Damage of Aluminum Interconnects
• Charging Damages to Gate Oxides in a Helicon O_2 Plasma
• Antenna Charging Effects on the Electrical Characteristics of Polysilicon Gate during Electron Cyclotron Resonance Etching
• Effects of Polysilicon Electron Cyclotron Resonance Etching on Electrical Characteristics of Gate Oxides
• Fabrication and Characterization of the Pd-Silicided Emitters for Field-Emission Devices
• Characterization and Fabrication of Chimney-Shaped Metal Field Emitters
• Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays
• Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures
• A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm
• Excellent Emission Characteristics of Tunneling Oxides Formed Using Ultrathin Silicon Films for Flash Memory Devices
• Electrical Characteristics of Thirn-Film Transistors with Double-Active-Layer Structure
• A New Portrayal of Oxidation of Undoped Polycrystalline Silicon Films in a Short Duration
• Low-Temperature Formation of Palladium Silicided Shallow p^+n Junctions Using Implant through Metal Technology
• Excellent Au/Ge/Pd Ohmic Contacts to n-type GaAs Using Mo/Ti as the Diffusion Barrier
• High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In_Ga_P
• Investigation of a High Quality and Ultraviolet-Light Transparent Plasma-Enhanced Chemical Vapor Deposition Silicon Nitride Film for Non-Volatile Memory Application
• Generalized Interconnect Delay Time and Crosstalk Models: II. Crosstalk-Induced Delay Time Deterioration and Worst Crosstalk Models : Semiconductors
• Generalized Interconnect Delay Time and Crosstalk Models: I. Applications of Interconnect Optimization Design : Semiconductors
• Integrated Tungsten Chemical Mechanical Polishing Process Characterization for Via Plug Interconnection in Ultralarge Scale Integrated Circuits
• Novel Technique to Form Pt-Silicided Shallow p^+n Junctions Using Low-Temperature Processes
• Effects of Vacancies on the Electrical Characteristics of Metal/GaAs Schottky Contacts "A Quantitative Model"
• Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing
• Effects of O_2- and N_2O-Plasma Treatments on Properties of Plasma-Enhanced-Chemical-Vapor-Deposition Tetraethylorthosilicate Oxide
• Enhanced Metalorganic Chemical Vapor Deposition Titanium Nitride Film Fabricated Using Tetrakis-Dimethylamino-Titanium for Barrier Metal Application in Sub-Half-Micron Technology
• Low-Temperature Process to Improve the Leakage Current of (Ba, Sr)TiO_3 Films on Pt/TiN/Ti/Si Substrates
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO_3 Thin Films at Low Substrate Temperatures
• Effect of Temperature and Illumination on the Instability of a-Si:H Thin-Film Transistors under AC Gate Bias Stress : Semiconductors
• Turnaround Phenomenon of Threshold Voltage Shifts in Amorphous Silicon Thin Film Transistors under Negative Bias Stress
• The Instability Mechanisms of Hydrogenated Amorphous Silicon Thin Film Transistors under AC Bias Stress
• The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States
• Plasma Passivation Effects on Polycrystalline Silicon Thin-Film Transistors Utilizing Nitrous Oxide Plasma
• Effects of Rapid Thermal Annealing on Cobalt Silicided p^+ poly-Si Gates Fabricated by BF^+_2 Implantation into Bilayered CoSi/a-Si Films
• High-Performance Superthin Oxide/Nitride/Oxide Stacked Dielectrics Formed by Low-Pressure Oxidation of Ultrathin Nitride
• High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires
• Reverse Annealing of Arsenic-Implanted Low-Pressure Chemical Vapor Deposition (LPCVD) Amorphous-Silicon Films
• Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor
• Investigation of A 450 V Rating Silicon-On-Insulator Lateral-Double-Diffused-Metal–Oxide– Semiconductor Fabrication by 12/25/5/40 V Bipolar-Complementary Metal–Oxide–Semiconductor Double-Diffused Metal–Oxide–Semiconductor Process on Bulk Silicon Substrate
• Effects of Post-Oxygen Plasma Treatment on Pt/(Ba,Sr)TiO3/Pt Capacitors at Low Substrate Temperatures
• Polarization Degradation and Breakdown of Pulse-Laser-Deposited (Pb,Sr)TiO3 Films at Low Temperatures
• The Reliability Improvements of Carbon Nanotubes Emitters by Utilizing an Fe–Ti Codeposited Catalyst
• High-Performance Excimer-Laser-Crystallized Polycrystalline Silicon Thin-Film Transistors with the Pre-Patterned Recessed Channel
• Dependence of Ferroelectric Characteristics on the Deposition Temperature of (Pb,Sr)TiO3 Films
• Characterizing Trench-Gate Power Metal–Oxide–Semiconductor Field Effect Transistor with Multi-Layer Dielectrics at the Trench Bottom
• A Quasi-Planar Thin Film Field Emission Diode
• Improved Field-Emission Properties of Carbon Nanotube Field-Emission Arrays by Controlled Density Growth of Carbon Nanotubes
• Fabrication and Characterization of Carbon Nanotube Triodes
• Growth and Field Emission Characteristics of Carbon Nanotubes Using Co/Cr/Al Multilayer Catalyst
• Fabrication of Novel Three-Step Drift-Doped Low-Temperature Polycrystalline Silicon Lateral Double-Diffusion Metal–Oxide–Semiconductor Using Excimer Laser Crystallization
• Fabrication and Characterization of lateral Field Emission Device Based on Carbon Nanotubes
• The Effects of Post Excimer Laser Annealing on (Ba,Sr)TiO3 Thin Films at Low Substrate Temperatures

もっと見る 閉じる

スポンサーリンク