Lateral Superjunction Reduced Surface Field Structure for the Optimization of Breakdown and Conduction Characteristics in a High-Voltage Lateral Double Diffused Metal Oxide Field Effect Transistor

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概要

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• Superjunction devices are reported to provide better high-voltage operation characteristics than conventional abrupt junction devices in silicon power applications. In this study, the superjunction reduced surface field (SJ-RESURF) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) is fabricated on a bulk silicon wafer to improve the operating characteristics of high-voltage devices. By introducing the p-type strips in the drift region, higher doping concentration of the drift region can be adopted to reduce the conduction resistance. The SJ-RESURF LDMOSFET with a specific on-resistance of 3.53 $\Omega$$\cdot$mm2, a breakdown voltage of 335 V and a drift length of 30 μm, is demonstrated; its turn on-resistance is 25% better than that of the conventional structure. The turn-on resistance, breakdown behavior, device geometry, temperature, and charge balance mechanics of the SJ-RESURF LDMOSFET are examined herein.

• 2003-12-15

著者

• Chang Fang-long

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• LEE Tsung-Hwang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LIAW Chorng-Wei

  Department of Electronics Engineering and Institute of Electronics, National Tsing Hua University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Lin Ming-jang

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Liaw Chorng-Wei

  Department of Electronics Engineering and Institute of Electronics, National Tsing Hua University, Hsinchu, Taiwan, R.O.C.

• Lee Tsung-Hwang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan, R.O.C.

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