A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-01-01

著者

• Chen H‐c

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Cheng H‐c

  National Tsing Hua Univ. Hsinchu Twn

• Wang C‐c

  National Chiao‐tung Univ. Hsinchu Twn

• Cheng Huang‐chung

  Nano Electronics And Display Technology Lab. Department Of Electronics Engineering And Institute Of

• Hsieh Iing-jar

  Department Of Electrical Engineering Chung-hua Polytechnic Institute

• CHENG Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• FENG Ming-Shiann

  Institute of Materials Science and Engineering, National Chiao Tang Universit

• Ku T‐k

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung University

• WANG Chih-Chong

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• CHEN Ming-Shang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• LEE Wen-Fang

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• KU Tze-Kun

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• Wang Chih-chong

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Chen Ming-sen

  Department Of Materials Science And Engineering National Tsing Hua University

• Lee Wen-fang

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Feng M‐s

  Institute Of Materials Science And Engineering National Cliiao Tang University

• Feng Ming-shiann

  Institude Of Materials Science And Engineering National Chiao Tung University

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