Integration of Modified Plasma-Enhanced Chemical Vapor Deposited Tetraethoxysilane Intermetal Dielectric and Chemical-Mechanical Polishing Processes for 0.35 μm IC Device Reliability Improvement

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-09-15

著者

• FENG Ming-Shiann

  Institute of Materials Science and Engineering, National Chiao Tang Universit

• Wang Y‐l

  National Taiwan Normal Univ. Taipei Twn

• WANG Ying-Lang

  Institute of Electronics, National Chiao-Tung University

• TSENG Wei-Tsu

  National Nano Device Laboratories

• Tseng W‐t

  National Cheng‐kung Univ. Tainan Twn

• Feng Ming-shiann

  Institude Of Materials Science And Engineering National Chiao Tung University

• Feng Ming-shiann

  Institute Of Materials Science And Engineering National Chiao-tung University

関連論文

• Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
• Pattern Effects on Planarization Efficiency of Cu Electropolishing
• Investigation of Carrying Agents on Microstructure of Electroplated Cu Films
• Investigation of Superfihling and Electrical Characteristics in Low-Impurity-Incorporated Cu Metallization
• Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures
• A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm
• Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
• Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• A New Portrayal of Oxidation of Undoped Polycrystalline Silicon Films in a Short Duration
• Integration of Modified Plasma-Enhanced Chemical Vapor Deposited Tetraethoxysilane Intermetal Dielectric and Chemical-Mechanical Polishing Processes for 0.35 μm IC Device Reliability Improvement
• Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
• Raman Scattering of Se-Doped Gallium Nitride Films
• Microcrystallinity of Undoped Amorphous Silicon Films and Its Effects on the Transfer Characteristics of Thin-Film Transistors
• Effect of Electric Potential and Mechanical Force on Copper Electro-Chemical Mechanical Planarization
• Investigation of the Galvanic Effect between RuN Barriers and Cu Seed Layers

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