Raman Scattering of Se-Doped Gallium Nitride Films
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-10-15
著者
-
FENG Ming-Shiann
Institute of Materials Science and Engineering, National Chiao Tang Universit
-
Guo J‐d
National Nano Device Laboratory
-
Lee Ming-chih
Institute Of Electrophysics National Chiao Tung University
-
KUO Hung-Red
Institute of Electrophysics, National Chiao Tung University
-
GUO Jeng-Dah
Institute of Material Science, National Chiao Tung University
-
Feng Ming-shiann
Institude Of Materials Science And Engineering National Chiao Tung University
-
Kuo Hung-red
Institute Of Electrophysics National Chiao Tung University
-
Feng Ming-shiann
Institute Of Material Science National Chiao Tung University
関連論文
- Investigation of the Indium Atom Interdiffusion on the Growth of GaN/InGaN Heterostructures
- Pattern Effects on Planarization Efficiency of Cu Electropolishing
- Investigation of Carrying Agents on Microstructure of Electroplated Cu Films
- Investigation of Superfihling and Electrical Characteristics in Low-Impurity-Incorporated Cu Metallization
- Simulation of the Electrical Characteristics of Field Emission Triodes with Various Gate Structures
- A New Fabrication Technology for Field-Emission Triodes with Emitter-Gate Separation of 0.18 μm
- Effects of Rapid Thermal Annealing on Si Delta-Doped GaInP Grown by Low Pressure Metalorganic Chemical Vapor Deposition
- Silicon Delta Doping of GaInP Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
- A New Portrayal of Oxidation of Undoped Polycrystalline Silicon Films in a Short Duration
- Optical and Electrical Characteristics of CO_2-Laser-Treated Mg-Doped GaN Film
- Electrical Properties of Multiple High-Dose Si Implantation in p-GaN
- Epitaxial Growth of the GaN Film by Remote-Plasma Metalorganic Chemical Vapor Deposition
- Integration of Modified Plasma-Enhanced Chemical Vapor Deposited Tetraethoxysilane Intermetal Dielectric and Chemical-Mechanical Polishing Processes for 0.35 μm IC Device Reliability Improvement
- Analysis of Influence of Alkyl Sources on Deep Levels in GaN by Transient Capacitance Method
- Raman Scattering of Se-Doped Gallium Nitride Films
- Microcrystallinity of Undoped Amorphous Silicon Films and Its Effects on the Transfer Characteristics of Thin-Film Transistors