Electrical Properties of Multiple High-Dose Si Implantation in p-GaN

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-07-15

著者

• Chang Chun

  Department Of Electronics Engineering National Chiao Tung University

• Chang C‐y

  Department Of Electronics Engineering National Chiao Tung University

• CHANG Chun-Yen

  Department of Electronics Engineering, National Chiao Tung University

• TSANG Jian-Shihn

  National Nano Device Laboratories

• GUO Jan-Dar

  National Nano Device Laboratories

• CHAN Shih-Hsiung

  National Nano Device Laboratories

• Chan S‐h

  Advanced Epitaxy Technol. Inc. Hsinchu Twn

• Lai W‐c

  National Cheng Kung Univ.

• Chang Chun-yen

  Instiute Of Electronics National Chiao-tang University

• Chang Chun-yen

  Department Of The Electro-optical Engineering National Chiao Tung University

• Chan Shih-hsiung

  Department Of Electrical Engineering National Cheng Kung University

• Chang Chun-yen

  Department Of Electronics Engineering & Institute Of Electronics National Chiao Tung Uiversity

• Guo J‐d

  National Nano Device Laboratory

• LAI Wei-Chih

  Department of Electrical Engineering, National Cheng Kung University

• TSANG Jian-Shihn

  Advanced Epitaxy Technology Inc.

• YOKOYAMA Mesio

  Department of Electrical Engineering, National Chen Kong University

• TSAI Chiung-Chi

  Department of the Electro-Optical Engineering, National Chiao Tung University

• CHANG Chen-Shiung

  Department of the Electro-Optical Engineering, National Chiao Tung University

• Yokoyama M

  Kawasaki Heavy Ind. Ltd. Chiba Jpn

• Tsai Chiung-chi

  Department Of The Electro-optical Engineering National Chiao Tung University

• Tsang J‐s

  Advanced Epitaxy Technol. Inc. Hsinchu Twn

• Chang C‐y

  Department Of Electronics Engineering Nation Chiao Tung University

• CHANG Chen-Shiung

  Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University

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