Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-10-15

著者

• LEE Chung

  Department of Anesthesiology and Pain Medicine, Asan Medical Center, University of Ulsan College of

• Chang Chun

  Department Of Electronics Engineering National Chiao Tung University

• Lai Chao

  Department Of Electronic Engineering Chang Gung University

• Chao T

  National Chiao Tung Univ. Hsinchu Twn

• Chang Chun

  Department Of Electronic Engineering And Institute Of Electronics National Chiao-tung University

• Lei T

  National Chiao Tung Univ. Hsinchu Twn

• LEI Tan

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University

• CHAO Tien

  National Nano Device Laboratories

• CHANG Chun

  National Nano Device Laboratory and Institute of Electronics National Chiao-Tang University

• Huang T

  National Chiao Tung Univ. Taiwan Chn

• Chao T‐s

  Department Of Electrophysics National Chiao Tung University

• Chao Tien

  National Device Laboratory

• Lee Chung

  Department Of Electronics Engineering National Chiao Tung University

• HUANG Tiao

  National Nano Device Laboratory

• Lei Tan

  Department Of Electronic Engineering National Chiao Tung University

• Chang C

  National Nano Device Laboratory

• Lee C

  Department Of Electronics Engineering National Chiao Tung University

• Lei Tan.

  National Nano Device Laboratory:department Of Electronics Engineering And Institute Of Electronics N

• Lee Chung

  Department Of Anesthesiology And Pain Medicine Asan Medical Center University Of Ulsan College Of Me

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