Current Transportation Mechanism and Interface States Characterization of Sputtered Gd_2O_3 Gate Dielectrics for ULSI Application
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Wang Jer
Nanya Technology Corporation
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Lai Chao
Department Of Electronic Engineering Chang Gung University
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Chao Tian
Department Of Electronic Physics National Chiao Tung University
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Chao Tien
Department Of Electrophysics National Chiac Tung University:nano Device Laboratories
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WU Woei
Department of Electronic Physics, National Chiao Tung University
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WANG Kuan
Department of Electronic Physics, National Chiao Tung University
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Wang Kuan
Department Of Electronic Physics National Chiao Tung University
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Wu Woei
Department Of Electronic Physics National Chiao Tung University
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Chao Tien
Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, Taiwan
関連論文
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- Hysteresis Phenomenon Improvements of HfO_2 by CF_4 Plasma Treatment
- Current Transportation Mechanism of HfO_2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application
- Current Transportation Mechanism and Interface States Characterization of Sputtered Gd_2O_3 Gate Dielectrics for ULSI Application
- Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays
- Thermal Stability Improvements for HfO_2 by Fluorine Implantation
- Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
- Ultra-Shallow Junction Formation using Implantation through Capping Nitride Layer on Source/Drain Extension : Short Note
- Characterizations of HfxMoyNz Alloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Strain Dependence of Mobility Enhancement in Local Strain Channel nMOSFETs
- Effects of Post CF4 Plasma Treatment on the HfO2 Thin Film
- Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Postdeposition Annealing
- Reoxidation after NH3 Plasma Nitridation for Multiple-Thickness Oxynitrides
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