Characterizations of HfxMoyNz Alloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors

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In this article, the work functions ($\Phi_{\text{m}}$) of hafnium–molybdenum (HfxMoy) alloys were modified using nitrogen in dc reactive cosputtering for the first time. The HfxMoyNz alloys show low resistivity and excellent thermal stability up to 900 °C. In addition, the work functions ($\Phi_{\text{m}}$) of the HfxMoyNz alloys were tuned from the conduction band (4.17 eV) to the valence band (5.16 eV) by increasing the nitrogen flow ratio. From the X-ray diffraction (XRD) data, the MoN(200) peak can be observed for samples with a nitrogen ratio higher than 6%, which was responsible for the work function ($\Phi_{\text{m}}$) increase in the HfxMoyNz alloys.
2008-04-25