Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Postdeposition Annealing
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概要
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In this work, we describe the characteristics of silicon surface fluorine implantation (SSFI) for HfO2 films with high-temperature postdeposition annealing. The thermal stability of HfO2 gate dielectrics is much improved owing to the incorporation of fluorine into HfO2 thin films. The gate leakage current of the SSFI HfO2 films is about three orders less than that of samples without any fluorine implantation. In addition, improvements in stress-induced leakage current (SILC) and charge trapping characteristics are realized in the HfO2 films with the SSFI. The incorporation of fluorine atoms into the HfO2 films reduces not only interface dangling bonds but also bulk traps, which is responsible for the improvements in properties.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Wang Jer
Nanya Technology Corporation
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Lai Chao
Department Of Electronic Engineering Chang Gung University
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Wu Woei
Department Of Electronic Physics National Chiao Tung University
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Wu Woei
Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, Taiwan
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Lai Chao
Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Rd., Kueishan, Taoyuan, Taiwan
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Chao Tien
Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu, Taiwan
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