GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application

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概要

• 論文の詳細を見る

• Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si<inf>3</inf>N<inf>4</inf>{\sim}50 nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365 nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaN-based LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution.

• 2013-03-25

著者

• Lai Chao

  Department Of Electronic Engineering Chang Gung University

• Chang Liann

  Department Of Electrical Engineering Chung Cheng Institute Of Technology

• Das Anirban

  Department Of Earth And Planetary System Science Hiroshima University

• Chu Fu

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Das Atanu

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Lin Ray

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Lin Yen

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Chow Lee

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Jeng Ming

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

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• GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application

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