High Barrier Height Nickel/GaAs Schottky Diodes Fabricated by Addition of Pr_2O_3 into a Ga Melt for Liquid Phase Epitaxy
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-01
著者
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Chang Liann
Department Of Electrical Engineering Chung Cheng Institute Of Technology
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Wang Hung
Departments Of Urology And Radiation Oncology Chang Gung Memorial Hospital
-
Yang Li
Department Of Biotechnology Graduate School Of Agicultural And Life Sciences The University Of Tokyo
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Wang H.
National Laboratory Of Solid State Microstructures Nanjing University
-
Wang Hung
Department Of Electrical Engineering Chung Cheng Institute Of Technology
-
Yang Li
Department Of Electrical Engineering Chung Cheng Institute Of Technology
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Yang Li
Department of Bioengineering, Chongqing University
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