High Barrier Height Nickel/GaAs Schottky Diodes Fabricated by Addition of Pr2O3 into a Ga Melt for Liquid Phase Epitaxy
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概要
- 論文の詳細を見る
A high Schottky barrier and low leakage current Ni/GaAs diode was fabricated by addition of an appropriate amount of Pr2O3 into a Ga melt for liquid phase epitaxy (LPE), which was brought about by removal of oxygen and sulfur impurities and induction of a slight increase in the concentration of carbon impurities at the grown surfaces. These effects not only enhanced the Schttky barrier height but also reduced the leakage current. Excellent properties of a Schottky barrier as high as 0.94±0.01 eV and an ideality factor as low as 1.02±0.01 were obtained.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1997-06-15
著者
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Chang Liann
Department Of Electrical Engineering Chung Cheng Institute Of Technology
-
Wang Hung
Department Of Electrical Engineering Chung Cheng Institute Of Technology
-
Yang Li
Department of Electrical Engineering, Chung Cheng Institute of Technology,
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Yang Li
Department of Bioengineering, Chongqing University
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