Light-Immune pH Sensor with SiC-Based Electrolyte--Insulator--Semiconductor Structure
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概要
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An electrolyte--insulator--semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd<inf>2</inf>O<inf>3</inf>) and hafnium oxide (HfO<inf>2</inf>), were investigated. The HfO<inf>2</inf>film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95 mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity.
- 2013-12-25
著者
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Lai Chao-sung
Department Of Electronic Engineering Chang Gung University
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Lin Yi-ting
Department Of Biological Science And Technology China Medical University
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Lai Chao-Sung
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Chow Lee
Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan
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Huang Chien-Shiang
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Yang Chia-Ming
Institute of Electro-optical Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Lan Jyun-Ming
Department of Electronic Engineering, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Chang Liann-Be
Biosensor Group, Biomedical Engineering Research Center, Chang Gung University, Kweishan, Taoyuan 333, Taiwan
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Chow Lee
Department of Physics, University of Central Florida, Orlando, FL32816, U.S.A.
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CHOW Lee
Department of Electronic Engineering, Chang Gung University
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