Effects of Post CF4 Plasma Treatment on the HfO2 Thin Film

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概要

• 論文の詳細を見る

• In this study, a novel approach was proposed to improve the characterization of HfO2. Fluorine was incorporated by CF4 plasma to improve the HfO2 gate dielectric properties including leakage current, breakdown voltage and hysteresis. The hysteresis of capacitance–voltage characteristics can be reduced to approximately 10% hysteresis voltage for the samples with CF4 plasma treatment. An inner-interface trapping model is presented to explain the hysteresis. The secondary-ion mass spectroscopy (SIMS) results show that there is a significant incorporation of fluorine (F) at the interface between the HfO2 thin film and silicon substrate. The incorporation of F effectively suppressed leakage current and improved carrier trapping without an increase in interfacial layer thickness.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Wang Jer

  Nanya Technology Corporation

• Lai Chao

  Department Of Electronic Engineering Chang Gung University

• Fan Kung

  Department Of Electronic Engineering Chang Gung University

• Wu Woei

  Department Of Electronic Physics National Chiao Tung University

• Lin Shian

  Nanya Technology Corp. Technology Process Development Department

• Wu Woei

  Department of Electronic Physics, National Chiao Tung University, 1001 Ta Hsueh Rd, Hsinchu, Taiwan

• Lai Chao

  Department of Electronic Engineering, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan

関連論文

• Effects of Post CF_4 Plasma Treatment on the HfO_2 Thin Film
• Hysteresis Phenomenon Improvements of HfO_2 by CF_4 Plasma Treatment
• Current Transportation Mechanism of HfO_2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application
• Current Transportation Mechanism and Interface States Characterization of Sputtered Gd_2O_3 Gate Dielectrics for ULSI Application
• Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays
• Thermal Stability Improvements for HfO_2 by Fluorine Implantation
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Characterizations of HfxMoyNz Alloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors
• Effects of Post CF4 Plasma Treatment on the HfO2 Thin Film
• Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Postdeposition Annealing
• Reoxidation after NH3 Plasma Nitridation for Multiple-Thickness Oxynitrides
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