Thermal Stability Improvements for HfO_2 by Fluorine Implantation

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Wang Jer

  Nanya Technology Corporation

• Lai Chao

  Department Of Electronic Engineering Chang Gung University

• Chao Tian

  Department Of Electronic Physics National Chiao Tung University

• WU Woei

  Department of Electronic Physics, National Chiao Tung University

• Wu Woei

  Department Of Electronic Physics National Chiao Tung University

関連論文

• Effects of Post CF_4 Plasma Treatment on the HfO_2 Thin Film
• Hysteresis Phenomenon Improvements of HfO_2 by CF_4 Plasma Treatment
• Current Transportation Mechanism of HfO_2 Gate Dielectrics with Silicon Surface Fluorine Implantation (SSFI) in CMOS Application
• Current Transportation Mechanism and Interface States Characterization of Sputtered Gd_2O_3 Gate Dielectrics for ULSI Application
• Characterization of Novel HfTiO Gate Dielectrics Post-treated by NH_3 Plasma and Ultra-violet Rays
• Thermal Stability Improvements for HfO_2 by Fluorine Implantation
• Improvement of Reliability of Metal-Oxide Semiconductor Field-Effect Transistors with N_2O Nitrided Gate Oxide and N_2O Polysilicon Gate Reoxidation
• Characterizations of HfxMoyNz Alloys as Gate Electrodes for n- and p-Channel Metal Oxide Semiconductor Field Effect Transistors
• Effects of Post CF4 Plasma Treatment on the HfO2 Thin Film
• Characteristics of Fluorine Implantation for HfO2 Gate Dielectrics with High-Temperature Postdeposition Annealing
• Reoxidation after NH3 Plasma Nitridation for Multiple-Thickness Oxynitrides
• GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application
• GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application
• GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application

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