Improved Device Performance of GaN/AlGaN High-Electron-Mobility Transistor Using PdO Gate Interlayer

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概要

• 論文の詳細を見る

• We demonstrate significant improvements of GaN/AlGaN high-electron-mobility transistors (HEMTs) by employing a PdO gate interlayer, which exhibit device performance superior to that of Pd Schottky gate HEMTs. The PdO gate interlayer effectively reduces the gate leakage current by four orders of magnitude, and it also increases the I_{\text{ON}}/I_{\text{OFF}} ratio to four orders of magnitude. The improved AlGaN/GaN/PdO HEMT shows a nearly ideal subthreshold slope of 66 mV/dec. The flicker noise characteristic is also observed to be lower in PdO-gate HEMTs than in Pd-Gate HEMTs. The high-work-function PdO layer and associated barrier height enhancement are the origins of the improved device performance.

• 2013-11-25

著者

• Lin Ray-ming

  Department Of Electrical Engineering National Central University

• Das Atanu

  Department of Electronic Engineering, Chang Gung University, Taoyuan 333, Taiwan

• Su Vin-Cent

  Graduate Institute of Electronic Engineering and Department of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwan

• Chu Fu-Chuan

  Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan

• Liao Sheng-Yu

  Department of Electronic Engineering, Chang Gung University, Taoyuan 33302, Taiwan

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