Barrier Height Enhancement of Ni/n-Type InP Schottky Contact Using a Thin Praseodymium Interlayer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1999-12-01
著者
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CHANG Liann-Be
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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LIN Ray-Ming
Department of Electronic Engineering and Green Technology Research Center, Chang Gung University
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Wang Hung-thung
Department Of Electrical Engineering Chung-cheng Institute Of Technology
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Lin R‐m
Chang Gung Univ. Tao‐yuan Twn
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Lin Ray-ming
Department Of Electrical Engineering National Central University
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Chang L‐b
Chung Cheng Inst. Technol. Taoyuan Twn
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Chang Liann-be
Department Of Electronic Engineering Chang-gung University
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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Lee Cheng-min
Department Of Applied Physics Chung-cheng Institute Of Technology
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Lee Cheng-min
Department Of Applied Physics Chung Cheng Institute Of Technology
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JENG Ming-Jer
Department of Electronic Engineering, St. John's & St. Mary's Institute of Technology
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CHENG Yi-Chang
Department of Electrical Engineering, Chung Cheng Institute of Technology
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Jeng Ming-jer
Department Of Electronic Engineering Chang-gung University
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Jeng Ming-jer
Department Of Electrical Engineering National Taiwan University
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Cheng Yi-chang
Department Of Electrical Engineering Chung Cheng Institute Of Technology
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Cheng Yi-chang
Department Of Electronics Engineering Ming Hsin University Of Science And Technology
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Cheng Y‐c
Ming‐hsin Inst. Technol. Hsin‐chu Twn
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