Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
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概要
- 論文の詳細を見る
Sulfur passivation has been shown to be effective for light intensity enhancement of AlGaInP light-emitting diodes (LEDs). The scribed AlGaInP LED die was dipped in (NH4)2Sx to passivate the LED surface. An effective suppression of surface recombination was observed. The leakage current of AlGaInP LEDs decreased from $1.4 \times 10^{-6}$ A (untreated samples) to $7\times 10^{-7}$ A ((NH4)2Sx-treated ones) at a reverse bias of 10 V. A 5-fold increase in the light intensity of the (NH4)2Sx-treated AlGaInP LEDs was observed relative to that of the untreated LEDs.
- 2007-04-25
著者
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Chang Liann-be
Department Of Applied Physics Chung-cheng Institute Of Technology
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Jeng Ming-jer
Department Of Electrical Engineering National Taiwan University
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Lin Jia-chuan
Department Of Electrical Engineering National Cheng Kung University
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Chang Yuan-Hsiao
Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Taoyuan 333, Taiwan, R.O.C.
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Huang Mei-Jiau
Department of Electrical Engineering, National Defense University, Tashi, Taoyuan 335, Taiwan, R.O.C.
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Lin Jia-Chuan
Department of Electronic Engineering, St. John's University, Tamsui, Taipei 25135, Taiwan, R.O.C.
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Jeng Ming-Jer
Department of Electronic Engineering, Chang Gung University, Kwei-Shan, Taoyuan 333, Taiwan, R.O.C.
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