Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method
スポンサーリンク
概要
- 論文の詳細を見る
In this work, we report on the simulation and physical insight of a Schottky/two-dimensional electron gas (2DEG) silicon barrier diode using a boundary element method (BEM) for the first time. The BEM can effectively reduce the dimensions of equation systems and the computation time as compared to conventional numerical methods such as finite-element or finite-difference methods. Using an efficient algorithm for depletion layer width estimation, the potential and electric field distributions, the dependence of the depletion layer thickness on the applied voltage, and capacitance-voltage (C-V) characteristics of the Schottky/2DEG junction under different bias conditions are investigated. It is found that the free boundary condition along the top surface of the Schottky/2DEG barrier diode exerts a strong effect on both the electric field distribution and C-V characteristics. In addition, the calculated results show that the Schottky/2DEG diode has a high C-V nonlinearity which increases with decreasing i-Si layer thickness around the 2DEG layer.
- 社団法人応用物理学会の論文
- 1995-10-15
著者
-
Wang S‐j
National Chiao Tung Univ. Hsinchu Twn
-
Wang Shui-jinn
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
-
Luo Ying-che
Department Of Electrical Engineering National Cheng Kung University
-
Cheng Ching-yuan
Department Of Electrical Engineering National Cheng Kung University
-
LIN Jia-Chuan
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
-
LUO Ying-Che
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
-
CHENG Ching-Yuan
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
-
Lin Jia-chuan
Department Of Electrical Engineering National Cheng Kung University
-
Lin Jia-chuan
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
-
CHIOU Yueh-Guey
Microelectronics Laboratory, Department of Electrical Engineering, National Cheng Kung University
-
Chiou Yueh-guey
Microelectronics Laboratory Department Of Electrical Engineering National Cheng Kung University
関連論文
- Influences of Interface Roughness Scattering on Asymmetric and/or Steplike Current-Voltage Characteristics of Resonant Tunneling Diodes
- Numerical Simulation and Experimental Realization of δ-doped Single Barrier Resonant Tunneling Diodes
- High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires
- Two-Dimensional Numerical Simulation of Si Schottky/Two-Dimensional Electron Gas Barrier Diode Using Boundary Element Method
- Effective Suppression of Surface Recombination of AlGaInP Light-Emitting Diodes by Sulfur Passivation
- Observation of Negative Differential Resistance Phenomena in Porous Silicon Superlattice Structures