High Field-Emission Stability of Offset-Thin-Film Transistor-Controlled Al-Doped Zinc Oxide Nanowires

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概要

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• Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 °C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of ${\sim}2.17$ V/μm and threshold field of ${\sim}3.43$ V/μm) compared with those of the conventional CNT FEAs grown at a temperature below 600 °C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, low-temperature processing, and structural simplicity, making it promising for applications in flat panel displays.

• 2011-04-25

著者

• Wang Jyh-liang

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Lee I-che

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tung University

• Cheng Huang-chung

  Department Of Electronics Engineering And Institute Of Electronics National Chiao Tang University

• Lin Jia-chuan

  Department Of Electrical Engineering National Cheng Kung University

• Wang Shui-jinn

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Yang Po-Yu

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 300, Taiwan, R.O.C.

• Yang Po-Yu

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

• Tsai Wei-Chih

  Department of Electronic Engineering, National Formosa University, Yunlin 63201, Taiwan

• Chang Chia-Tsung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

• Wang Jyh-Liang

  Department of Electronics Engineering, Ming Chi University of Technology, Taipei 24301, Taiwan

• Lin Jia-Chuan

  Department of Electronics Engineering, St. John's University, Taipei 25135, Taiwan

• Wang Shui-Jinn

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan

• Cheng Huang-Chung

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

• Lee I-Che

  Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu 30010, Taiwan

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