Characterization of Hf1-xZrxO2 Gate Dielectrics with 0\leq x\leq 1 Prepared by Atomic Layer Deposition for Metal Oxide Semiconductor Field Effect Transistor Applications

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概要

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• In this work, we investigated the influence of incorporating zirconia (ZrO2) in HfO2 gate dielectric on the electrical properties and reliability of n-channel metal oxide semiconductor field effect transistors (nMOSFETs). Detailed film physical, chemical and optical properties of Hf1-xZrxO2 as a function of Zr content were studied using high resolution transmission electron microscopy (HR-TEM), angle resolved X-ray photoelectron spectroscopy (AR-XPS), and spectroscopic ellipsometer (SE). Compared to HfO2, Hf1-xZrxO2 provides not only higher k values for further equivalent oxide thickness (EOT) scaling but also lower capacitance--voltage (C--V) hysteresis, lower threshold voltage (V_{\text{t}}) shift (\Delta V_{\text{t}}), and higher time-to-failure (TTF) lifetimes. Improved TTF lifetime of as high as three orders of magnitude and 35% lower V_{\text{t}} shift were achieved from the Hf1-xZrxO2 gate stack with x=0.8. The improved reliability of the Hf1-xZrxO2 gate dielectric is attributed to the reduced charge trapping in the Hf1-xZrxO2 gate dielectric caused by the ZrO2 incorporation.

• 2012-01-25

著者

• Wu Chien-hung

  Department Of Nuclear Science National Tsing-hua University

• Chiang Chen-kuo

  Institute Of Microelectronics Dept. Of Electrical Eng. National Cheng Kung Univ.

• Wang Shui-jinn

  Institute Of Microelectronics Department Of Electrical Engineering National Cheng Kung University

• Wu Jiun-Yuan

  United Microelectronics Corporation, Science-Based Industrial Park, Hsinchu 300, Taiwan, R.O.C.

• Liu Chin-Chien

  United Microelectronics Corporation, Science-Based Industrial Park, Hsinchu 300, Taiwan, R.O.C.

• Lin Jin-Fu

  United Microelectronics Corporation, Science-Based Industrial Park, Hsinchu 300, Taiwan, R.O.C.

• Yang Chien-Lun

  United Microelectronics Corporation, Science-Based Industrial Park, Hsinchu 300, Taiwan, R.O.C.

• Chiang Chen-Kuo

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.

• Wu Chien-Hung

  Department of Electronics Engineering, Chung Hua University, Hsinchu 30012, Taiwan, R.O.C.

• Wang Shui-Jinn

  Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C.

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